Detail of Laboratories
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Device Materials Laboratory

Hachioji

Electrical Engineering and Electronics


Regents professor

  • Tomohiro YAMAGUCHI: Associate Professor
  • Compound Semiconductors
  • Crystal Growth
  • Light Emitting Diode (LED)
  • Solar Cell

Topics of research

- Epitaxial growth of compound semiconductors, such as group-III nitrides and group-III oxides
- Fabrication of optical devices using compound semicondoctors, such as LED and solar cell
- Development of novel growth method

Research content

In-based group-III nitride semiconductors, including InN and GaInN ternary alloys, have been attracting considerable attention for application to not only visible but also infrared light-emitting devices since the narrow band gap of InN around 0.7 eV was first reported in 2002. However, developments of actual devices based on these materials have been hampered mainly due to relatively poor quality of these materials. We have proposed a new radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) growth method. Nitride-based LEDs have been fabricated using the new growth method.
The reseaches on other materials and growth methods have also been in progress in our laboratory.