High-level light-output intensity microdisplays are required for the application to mobile systems. It is due to their use under daylight.The iIntegrated GaN-based light-emitting diode is one of the candidates. The research tagrget of our group is the fabrication of integrated light-emitting devices based on GaN and its related materials. The operation wavelength of those devices is reanging from green to UV spectral regions. Red, green and blue (RGB) light conversion from the UV light using phosphors is also investigated. Forthe high-dence integration, GaN and its related materials growth on metal or conductive substratres is also investigated. Typical discussion fields are listed below.

• Fabrication of GaN-based light-emitting diodes and its related proceeses
• Localization of electrons and holes in light-emitting diodes
• Fabrication of UV transparent electrodes (oxides)
• Molecular beam epitaxiy of III-V nitrides
• Flat-display panels